W19B320AT/B
7.5.4
Command Definitions
COMMAND
BUS CYCLES (note 2-5)
SEQUENCE
CYCLE
FIRST
SECOND
THIRD
FOURTH
FIFTH
SIXTH
(note 1 )
ADDR
DATA
ADDR
DATA
ADDR
DATA
ADDR
DATA
ADDR
DATA ADDR DATA
Read (note 6)
Reset (note 7)
1
1
RA
XXX
RD
F0
Normal
Program
Unlock Bypass
Word
Byte
Word
Byte
4
3
555
AAA
555
AAA
AA
AA
2AA
555
2AA
555
55
55
555
AAA
555
AAA
A0
20
PA
PD
Unlock Bypass
Program (note 11)
Unlock Bypass Reset
(note12)
2
2
XXX
BA
A0
90
PA
XXX
PD
00
Chip Erase
Sector Erase
Word
Byte
Word
Byte
6
6
555
AAA
555
AAA
AA
AA
2AA
555
2AA
555
55
55
555
AAA
555
AAA
80
80
555
AAA
555
AAA
AA
AA
2AA
555
2AA
555
55
55
555
AAA
SA
10
30
Erase Suspend
(note 13)
Erase Resume
(note 14)
1
1
BA
BA
B0
30
Byte
Manufacturer Word
Code
4
555
AAA
AA
2AA
555
55
(BA)555
(BA)AAA
90
(BA)X00
DA
Device
Code
Word
Byte
6
555
AAA
AA
2AA
555
55
(BA)555
(BA)AAA
90
(BA)X01
(BA)x02
7E
(BA)X0E
(BA)X1C
0A
(BA)X0
F
(BA)x1E
00/01
Security
Word
555
2AA
(BA)555
(BA)X03
Sector Factory
Protect (note
9)
Byte
4
AAA
AA
555
55
(BA)AAA
90
(BA)X06
82/02
Sector/
Sector
Block
Protect
Verify (note
10)
Word
Byte
4
555
AAA
AA
2AA
555
55
(BA)555
(BA)AAA
90
(SA)X02
(SA)X04
00/01
Enter Security
Sector Region
Word
Byte
3
555
AAA
AA
2AA
555
55
555
AAA
88
Exit Security
Sector Region
Word
Byte
4
555
AAA
AA
2AA
555
55
555
AAA
90
XXX
00
Common Flash
Interface (CFI)
Query (note 15)
Word
Byte
1
55
AA
98
Legend:
X = Don’t Care
RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the #WE or #CE pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of #WE or #CE pulse, whichever happens first.
RD = Data read from location RA during read operation.
Publication Release Date: December 27, 2005
- 29 -
Revision A4
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相关代理商/技术参数
W19B320B 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory
W19B320BB 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory
W19B320BB-H 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations
W19B320BB-M 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations
W19B320BT 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory
W19B320BT-H 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations
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W19B320BTT7H 功能描述:IC FLASH 32MBIT 70NS 48TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步,DDR II 存储容量:18M(1M x 18) 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA(13x15) 包装:托盘 其它名称:71P71804S200BQ